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Paper 98-4
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IBIC AND IBIL MICROSCOPY APPLIED TO ADVANCED SEMICONDUCTOR MATERIALS.
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Nucl. Instr. And Meth. In Phys. Res. B 136-138 (1998) 1333-1339 |
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*C. Manfredotti, *F. Fizzotti,*P. Polesello, *E. Vittone, *M. Truccato, *A. Lo Giudice, **M. Jaksic, ***P. Rossi |
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*INFN-sez. Torino, via P.Giuria 1, 10125 Torino, Italy* Experimental Physics Department, University of Torino, Via P. Giuria 1, 10125 Torino (Italy) |
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**Ruder Boskovic Institute, P.O. Box 1016, 10000 Zagreb ( Croatia ) *** Physics Department, University of Padova, Via Marzolo 8, 35131 Padova (Italy) |
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Key Words: CVD Diamond, semiconductor, IBIC, IBIL |
ABSTRACT
A new version of classical IBIC technique is presented together with a comparison between IBIC and IBIl microscopy with the aim of obtaining maps of radiative recombination centers in technologically advanced materials. In same cases ( Si, CdTe ) the method is used to profile the electrical field in the bulk of the sample, in other cases ( GaAs, CVD diamond ) maps of charge collection length are obtained and compared with morphological and structural features. A model for the interpretation of both IBIC and IBIL maps and spectra is presented and qualitatively discussed. In our opinion, maps of the IBIL/IBIC ratio could be used in order to get maps of radiative recombination centers
